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Home › Device and method for fabricating highly integrated and miniaturized silicon quantum bit device including at least a tunnel field effect transistor with reduced leakage current, inter-quantum bit coupler, and quantum gate operating mechanism that are formed by self-alignment

Device and method for fabricating highly integrated and miniaturized silicon quantum bit device including at least a tunnel field effect transistor with reduced leakage current, inter-quantum bit coupler, and quantum gate operating mechanism that are formed by self-alignment

US Patent 12382843 · Granted Aug 5, 2025

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