Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Conductive channel structure for SiC devices, fully integrated SiC device and fully integrated manufacturing process thereof

Conductive channel structure for SiC devices, fully integrated SiC device and fully integrated manufacturing process thereof

US Patent 12382707 · Granted Aug 5, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Ultrasonic welding head and welding device2025
Aryl ether-substituted heterocyclic compounds as GLP1R agonists2025
Remote reconfiguration system for internet of things (IoT) intelligent sensing t2025
Inductor current estimation method for DC-DC switching power supply2025
Aqueous polyurethane resin composition and coating material using the compositio2025
Vibration feedback device, handheld communication device, and wearable device2025
Staggered dual-side multi-chip interconnect2025
Multifunctional sound device2025
Method, system, electronic device and storage medium for constructing local conv2025
Horizontal hall device and preparation method2025
Horizontal hall device and preparation method2025
Horizontal hall device and preparation method2025