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Home › Non-planar two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) including epitaxially growing an n-type buried layer between first channel and second channel and a method of forming the same

Non-planar two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) including epitaxially growing an n-type buried layer between first channel and second channel and a method of forming the same

US Patent 12376324 · Granted Jul 29, 2025

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