Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Precursors and processes for deposition of Si-containing films using ALD at temperature of 550° C. or higher

Precursors and processes for deposition of Si-containing films using ALD at temperature of 550° C. or higher

US Patent 12368042 · Granted Jul 22, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Devices having a rare earth (oxy) fluoride coating for improved resistance to co2025
Porous glass base material manufacturing apparatus, method for manufacturing por2025
Silicon-based self-assembling monolayer compositions and surface preparation usi2025
Group 6 transition metal-containing compositions for vapor deposition of group 62024
Group 6 transition metal-containing compositions for vapor deposition of group 62024
Manufacturing apparatus and manufacturing method of porous glass base material f2024
Manufacturing method of porous glass base material for optical fiber and manufac2024
Manufacturing apparatus and manufacturing method of porous glass base material f2024
Si-containing film forming precursors and methods of using the same2023
Reagents to remove oxygen from metal oxyhalide precursors in thin film depositio2023
Preprocessing method for solid material, and solid material product filled with 2023
Manufacturing method of porous glass base material for optical fiber2023