Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabricating an electroconductive contact on a top layer of a tunneling magnetoresistance element using two hard masks

Fabricating an electroconductive contact on a top layer of a tunneling magnetoresistance element using two hard masks

US Patent 12364163 · Granted Jul 15, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Magnetoresistance element including a multi-layered free layer stack to tune hys2025
Flash memory cell structure having separate program and erase electron paths2025
Flash memory cell structure having separate program and erase electron paths2025
Method and system for detecting hand gesture, and computer readable storage medi2025
Method of manufacturing angle sensors including magnetoresistance elements inclu2025
Reducing angle error in angle sensor due to orthogonality drift over magnetic-fi2025
Reducing angle error in angle sensor due to orthogonality drift over magnetic-fi2025
Reducing angle error in angle sensor due to orthogonality drift over magnetic-fi2025
Magnetoresistance element including a skyrmion layer and a vortex layer that are2025
Controlling out-of-plane anisotropy in an MR sensor with free layer dusting2025
Controlling out-of-plane anisotropy in an MR sensor with free layer dusting2025
Surveillance device and surveillance method2025