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Home › Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same

Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same

US Patent 12356873 · Granted Jul 8, 2025

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