Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the same

Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the same

US Patent 12315542 · Granted May 27, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Magnetic memory devices2025
Magnetic memory device2025
Magnetic memory device2025
Magnetic memory device2025
Magnetic memory devices2024
Magnetic memory devices and methods of controlling domain sizes thereof2024
Magnetic memory device2024
Semiconductor memory device with spin-orbit coupling channel2024
Magnetic memory device and method for manufacturing the same2024
Magnetic memory device2024
Magnetic memory devices having multiple magnetic layers therein2024
Sputtering apparatus and method of fabricating magnetic memory device using the 2023