Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device including epitaxial electrode layer and dielectric epitaxial structure and method of manufacturing the same

Semiconductor device including epitaxial electrode layer and dielectric epitaxial structure and method of manufacturing the same

US Patent 12310039 · Granted May 20, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device including resistance change layer and metal particle-embedd2025
Semiconductor device including interconnection structure including MXene and met2025
Semiconductor device including ferroelectric layer and insulation layer with met2025
Electronic device including channel layer including variable resistance and meth2025
Electronic device including proton conductive layer and resistance change channe2025
Semiconductor device including heat insulating layer and method of manufacturing2024
Semiconductor device including interlayer insulation structure including metal-o2024
Semiconductor device including ferroelectric layer and metal particles embedded 2024
Method of treating target film and method of manufacturing semiconductor device2024
Semiconductor device having transistor device of three-dimensional structure2024
Semiconductor device with interlayer insulation structure including metal-organi2024
Semiconductor memory device2024