Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ferroelectric tunnel junction devices with internal biases for long retention

Ferroelectric tunnel junction devices with internal biases for long retention

US Patent 12310037 · Granted May 20, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Crested barrier device and synaptic element2024
Characterizing defects in semiconductor layers2024
Optimized selector and memory element with electron barrier2024
MIEC and tunnel-based selectors with improved rectification characteristics and 2023
Controlling positive feedback in filamentary2023
Controlling positive feedback in filamentary2023
Controlling positive feedback in filamentary RRAM structures2022
Ferroelectric memory and logic cell and operation method2021
MIEC and tunnel-based selectors with improved rectification characteristics and 2021