Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Three-dimensional memory device with divided drain select gate lines and method for forming the same

Three-dimensional memory device with divided drain select gate lines and method for forming the same

US Patent 12302560 · Granted May 13, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three-dimensional memory device and method of forming the same2025
Three-dimensional NAND memory device having word line contact with dielectric fi2025
Memory system, semiconductor device and fabrication method therefor2025
Vertical memory devices and method of fabrication thereof2025
Three-dimensional memory devices and methods for forming the same2025
Method of fabricating a semiconductor device using laser annealing2025
Three-dimensional NAND memory device and method of forming the same2025
Three-dimensional memory and fabrication method thereof2025
Three-dimensional NAND memory device and method that eliminate leakage currents 2025
Gateline mask design for removing sacrificial gateline polysilicon within stair 2025
Memory devices having vertical transistors and methods for forming the same2025
Three-dimensional memory and fabrication method thereof2025