Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated structure having a P-type semiconductor diffusion barrier layer forming a Van Der Waals junction with a P-type substrate and electronic device including the same

Integrated structure having a P-type semiconductor diffusion barrier layer forming a Van Der Waals junction with a P-type substrate and electronic device including the same

US Patent 12278187 · Granted Apr 15, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Device and method for driving display panel and display device2025
Optoelectronic synaptic device including quantum dot(QD)-transition metal chalco2025
Field effect transistor including transition metal dichalcogenide covered with p2025
Display device including light emitting elements overlapping light absorbing lay2025
Light-gated transistor including large-area transition metal dichalcogenide as l2025
Light-gated transistor including large-area transition metal dichalcogenide as l2025
Method for controlling surface characteristics and thickness of multilayer trans2025
Cavitation based tissue removal device using focused ultrasound2025
Display device and method of manufacturing the same2025
Display device, method of manufacturing the same, and tiled display device inclu2025
Display device and tiled display device including the same2024
Unit of light-emitting elements and display device including the same2024