Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Seed layer for ferroelectric memory device and manufacturing method thereof

Seed layer for ferroelectric memory device and manufacturing method thereof

US Patent 12261043 · Granted Mar 25, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming memory device2025
Memory cell and method of operating the same2025
Semiconductor memory device and method for manufacturing the same2025
Semiconductor arrangement and method of manufacture2025
Semiconductor chip2025
Methods of reducing parasitic capacitance in semicondutor devices2025
Three-dimensional memory device and manufacturing method thereof2025
Back-end-of-line selector for memory device2025
Memory cell and method2025
Ferroelectric memory device and memory array2025
Source/drain metal contact and formation thereof2025
FinFET structure with airgap and method of forming the same2025