P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D barrier

Assignee

• Imam Mohammad Ibn Saud Islamic University

Inventors

• Ghada A. Khouqeer (3 patents)
• Arihant Raj Siddarth (2 patents)
• Gaurav Jayaswal (4 patents)
• Rahul Sharma (21 patents)
• Yogita Sharma (2 patents)
• Priya Kaushal (2 patents)
• Gargi Khanna (2 patents)
• Tahani A. Alrebdi (3 patents)
• Abdullah Nasser Alodhayb (8 patents)

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