Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide semiconductor device with overlapping electric field relaxation regions and method of manufacturing the same

Silicon carbide semiconductor device with overlapping electric field relaxation regions and method of manufacturing the same

US Patent 12243910 · Granted Mar 4, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Image pickup apparatus in which global shutter driving of image pickup device is2025
Semiconductor device2025
Switching element2025
Photoelectric conversion device and method of driving photoelectric conversion d2025
Printer2025
Silicon carbide semiconductor device and method for manufacturing the same2025
Semiconductor device with surface and deep guard rings2025
Image forming apparatus and ink jet recording apparatus2025
Apparatus for producing joined-resin product and method for producing joined-res2024
Semiconductor device having cell section with gate structures partly covered wit2024
Recording apparatus2024
Silicon carbide semiconductor device and method for manufacturing same2024