Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device with air gap and boron nitride cap and method for preparing the same

Semiconductor device with air gap and boron nitride cap and method for preparing the same

US Patent 12237370 · Granted Feb 25, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Light-emitting diode driving device with adjustable dimming depth2025
Vertical memory structure with air gaps and method for preparing the same2025
Method for preparing memory array with contact enhancement sidewall spacers2024
Method for preparing vertical memory structure with air gaps2024
Method for preparing memory array with contact enhancement sidewall spacers2023
Method for preparing semiconductor device with air gap and boron nitride cap2023
Memory cell, memory array and method for defining active area of memory cell2023
Vertical memory structure with air gaps and method for preparing the same2022
Semiconductor device with air gap and boron nitride cap and method for forming t2022
Semiconductor device structure and method for preparing the same2021
LGA socket terminal damage prevention2017
System and method for generating a user callstack trace2015