Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a beta-Ga2O3-based single crystal film by flowing a Ga chloride gas, an oxygen gas, and a dopant gas

Method of manufacturing a beta-Ga2O3-based single crystal film by flowing a Ga chloride gas, an oxygen gas, and a dopant gas

US Patent 12230500 · Granted Feb 18, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device2025
Ga2O3-based single crystal substrate2024
Field effect transistor2024
Method for growing beta-Ga2O3-based single crystal film, and crystalline layered2024
Schottky barrier diode2024
Schottky barrier diode2024
Schottky barrier diode2023
Schottky barrier diode2023
Field effect transistor2023
GA2O3-based semiconductor device2023
Schottky barrier diode2023
Schottky barrier diode2022