Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods used in forming a memory array comprising strings of memory cells including forming a pair of elevationally-extending walls that are laterally-spaced relative one another and that are individually horizontally-longitudinally-elongated

Methods used in forming a memory array comprising strings of memory cells including forming a pair of elevationally-extending walls that are laterally-spaced relative one another and that are individually horizontally-longitudinally-elongated

US Patent 12211746 · Granted Jan 28, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Microelectronic devices including stair step structures, and related memory devi2025
Methods of forming microelectronic devices including differently sized conductiv2025
Microelectronic devices and memory devices including support pillars2025
Microelectronic devices with lower recessed conductive structures and related me2025
Microelectronic devices with lower recessed conductive structures and related me2025
Microelectronic devices with different staircased stadiums having consistent mul2025
Microelectronic devices, and related electronic systems and methods2025
Microelectronic devices, memory devices, and electronic systems2025
Integrated assemblies and methods of forming integrated assemblies2025
Electronic devices including pillars in array regions and non-array regions2025
Microelectronic devices including active contacts and support contacts, and rela2025
Microelectronic devices including active contacts and support contacts, and rela2025