Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing semiconductor device comprising contact void surrounding bit line

Method for manufacturing semiconductor device comprising contact void surrounding bit line

US Patent 12211739 · Granted Jan 28, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for manufacturing semiconductor device2025
Method for manufacturing semiconductor device2025
Semiconductor structures having deep trench capacitor and methods for manufactur2025
Method for manfacturing semiconductor device for reducing partcle-induced defect2025
Method for manfacturing semiconductor device for reducing partcle-induced defect2025
Method for manufacturing semiconductor device2025
Method for manufacturing semiconductor device2025
Semiconductor structures having deep trench capacitor and methods for manufactur2025
Semiconductor structures having deep trench capacitor and methods for manufactur2024
Semiconductor structures having deep trench capacitor and methods for manufactur2024
Semiconductor memory device2024
Semiconductor memory device with air gaps for reducing current leakage2023