Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › FinFET device having source/drain regions including a plurality of conductivity types and manufacturing method therefor

FinFET device having source/drain regions including a plurality of conductivity types and manufacturing method therefor

US Patent 12205988 · Granted Jan 21, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Solid-state imaging device and imaging apparatus2025
Semiconductor device including a field effect transistor with nanostructure base2025
Three-dimensionally structured imaging device2024
Semiconductor device including cation species, manufacturing method thereof, and2024
Semiconductor device2024
Complementary transistor and semiconductor device2024
Semiconductor device and manufacturing method therefor2023
Conductive structure, method of forming conductive structure, and semiconductor 2023
Semiconductor device2022
Electrical coupling structure, semiconductor device, and electronic apparatus2022
Complementary transistor and semiconductor device2021
Complementary transistor and semiconductor device2020