Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device including silicon carbide region containing oxygen

Semiconductor device including silicon carbide region containing oxygen

US Patent 12191356 · Granted Jan 7, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Wafer having a silicon carbide crystal layer with stacking faults provided on a 2025
Method for manufacturing semiconductor device, semiconductor device, inverter ci2025
Semiconductor device and method for manufacturing the same2025
Semiconductor device and method for manufacturing the same2025
Particle extraction apparatus and particle extraction method2025
Semiconductor device2025
Semiconductor device including compound and nitride members2025
Semiconductor device, semiconductor device manufacturing method, inverter circui2024
Semiconductor device that includes at least four semiconductor regions2024
Semiconductor device, method for manufacturing semiconductor device, inverter ci2024
Semiconductor device, semiconductor device manufacturing method, inverter circui2024
Semiconductor device, method for manufacturing semiconductor device, inverter ci2024