Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nitride semiconductor device comprising layered structure of active region and method for manufacturing the same

Nitride semiconductor device comprising layered structure of active region and method for manufacturing the same

US Patent 12166083 · Granted Dec 10, 2024

Estimated economic value: $1,043,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nitride semiconductor device2025
Image forming apparatus2023
Developing device2023
Nitride semiconductor device comprising layered structure of active region and m2023
Hollow-fiber membrane blood purification device2019
Hollow-fiber membrane blood purification device2018
Photosensitive resin composition and laminate2013
Photosensitive resin composition, photosensitive resin laminate, method for form2013