Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

US Patent 12159943 · Granted Dec 3, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Image processing method and related device2025
Polar code segment encoding method and communication device2025
Anti-CD137 antibodies and method of treating colorectal cancer using them2025
Methods and compositions for cancer treatment2024
Method for synthesizing (S)-nicotine and intermediate thereof2024
Polar code segment encoding method and communication device2024
Proteinaceous heterodimer and use thereof2023
Anti-CD27 antibodies and use thereof2023
Low-leakage regrown GaN p-n junctions for GaN power devices2023
Low-leakage regrown GaN p-n junctions for GaN power devices2023
Low-leakage regrown GaN p-n junctions for GaN power devices2023
Immunoconjugates comprising signal regulatory protein alpha2022