Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field assisted interfacial diffusion doping through heterostructure design

Field assisted interfacial diffusion doping through heterostructure design

US Patent 12142642 · Granted Nov 12, 2024

Estimated economic value: $50,531,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Photoconductive switch with diamond2025
Photoconductive switch with diamond2025
Monolithic growth of epitaxial silicon devices via co-doping2025
Photoconductive semiconductor-based stub tuners for high power2025
Silicon carbide nanoneedles and fabrication thereof2025
Silicon carbide nanoneedles and fabrication thereof2025
Doped amorphous silicon carbide2024
Doped amorphous silicon carbide2024
Three dimensional vertically structured electronic devices2024
Wide bandgap optical switch circuit breaker for controlling propagation of curre2024
Optically addressable light valves for high power operation2024
Optically addressable light valves for high power operation2024