Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method to form contacts with multiple depth by enhanced CESL

Method to form contacts with multiple depth by enhanced CESL

US Patent 12131946 · Granted Oct 29, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Liner and barrier layer in dual damascene cu interconnect for enhanced EM and pr2025
Liner and barrier layer in dual damascene cu interconnect for enhanced EM and pr2025
Notch shape of trench gate bottom corner for better breakdown voltage of power M2024
Super junction power device and method of making the same2024
Super junction power device2024
High voltage semiconductor device comprising a combined junction terminal protec2024
Super junction power device and method of making the same2024
SiGe HBT with graphene extrinsic base and methods2024
Structure and method of new power MOS and IGBT with built-in multiple VT'S2024
Simultaneous self-forming hea barrier and Cu seeding layers for Cu interconnect2024
Simultaneous self-forming hea barrier and Cu seeding layers for Cu interconnect2024
Method for monitoring and controlling supporting posture of supporting-type hydr2024