Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor structure with air gap in pattern-dense region and method of manufacturing the same

Semiconductor structure with air gap in pattern-dense region and method of manufacturing the same

US Patent 12131908 · Granted Oct 29, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure with air gap in pattern- dense region and method of manu2025
Method for preparing memory device having protrusion of word line2025
Memory device having protrusion of word line2024
Semiconductor device with thermal release layer and method for fabricating the s2024
Semiconductor device with carbon hard mask and method for fabricating the same2023
Method for preparing semiconductor device with air gap in pattern-dense region2023
Method for fabricating semiconductor device including capacitor structure2023
Semiconductor device with carbon hard mask and method for fabricating the same2023
Semiconductor device with thermal release layer and method for fabricating the s2022
Semiconductor device with air gap in pattern-dense region and method for forming2022
Semiconductor device and method for fabricating the same2021
Semiconductor device and method for fabricating the same2021