Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High electron mobility transistor and method for fabricating the same

High electron mobility transistor and method for fabricating the same

US Patent 12125903 · Granted Oct 22, 2024

Estimated economic value: $648,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

III-V compound semiconductor field-effect transistor gate structure comprising a2025
High electron mobility transistor and method for fabricating the same2025
High electron mobility transistor and method for fabricating the same2025
High electron mobility transistor structure and method of fabricating the same2025
High-electron mobility transistor and fabrication method thereof2025
High-electron mobility transistor and fabrication method thereof2025
High electron mobility transistor and method for fabricating the same2025
High electron mobility transistor and method for fabricating the same2025
High electron mobility transistor and method for fabricating the same2025
High electron mobility transistor and method for fabricating the same2025
Manufacturing method of semiconductor device2025
Nitride semiconductor device and manufacturing method thereof2025