Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fin field-effect transistor device and method of forming

Fin field-effect transistor device and method of forming

US Patent 12125707 · Granted Oct 22, 2024

Estimated economic value: $19,443,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor processing tool and methods of operation2025
Semiconductor device with short-resistant capacitor plate2025
Semiconductor device and methods of formation2025
Semiconductor structure formation2025
Source and drain structure with reduced contact resistance and enhanced mobility2025
Source and drain structure with reduced contact resistance and enhanced mobility2025
Source and drain structure with reduced contact resistance and enhanced mobility2025
Extended side contacts for transistors and methods forming same2025
Method for forming recesses in a substrate by etching dummy fins2025
Method for forming recesses in a substrate by etching dummy fins2025
Method for forming a 3-D semiconductor memory structure comprising horizontal an2025
Transistor gate structure and process2025