Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fin-based semiconductor device structure including self-aligned contacts and method for forming the same

Fin-based semiconductor device structure including self-aligned contacts and method for forming the same

US Patent 12119391 · Granted Oct 15, 2024

Estimated economic value: $30,312,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Tuning threshold voltage in nanosheet transitor devices2025
Input/output semiconductor devices2025
Semiconductor transistor device structure including nanostructure and gate struc2025
Memory array isolation structures2025
Fluorine incorporation method for nanosheet2025
Semiconductor devices with backside power rail and backside self-aligned via2025
Semiconductor devices with backside power rail and backside self-aligned via2025
Semiconductor devices with backside power rail and backside self-aligned via2025
Source/drain metal contact and formation thereof2025
2D-channel transistor structure with asymmetric substrate contacts2025
FinFET structure with airgap and method of forming the same2025
FinFET structure with airgap and method of forming the same2025