Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Buffer layer structure to improve gan semiconductors

Buffer layer structure to improve gan semiconductors

US Patent 12119382 · Granted Oct 15, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High electron mobility transistor structure and method of manufacturing the same2025
Epitaxial structure2025
Microcirculation detection system and method2025
Single-phase and three-phase compatible ac-dc conversion circuit and method of d2025
Epitaxial structure having diffusion barrier layer2025
Method for producing silicon ingot single crystal2024
Temperature detection device2024
Semiconductor substrate2024
Semiconductor epitaxy structure2024
Method for producing Si ingot single crystal, Si ingot single crystal, and appar2024
Apparatus for producing Si ingot single crystal2024
Interactive service platform and operating method thereof2024