Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fin-based field effect transistor (finFET) device with enhanced on-resistance and breakdown voltage

Fin-based field effect transistor (finFET) device with enhanced on-resistance and breakdown voltage

US Patent 12113065 · Granted Oct 8, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multi-fin FINFET device including epitaxial growth barrier on outside surfaces o2025
Method to co-integrate SiGe and Si channels for finFET devices2023
Multi-fin FINFET device including epitaxial growth barrier on outside surfaces o2023
Vertical tunneling FinFET2022
Forming replacement low-k spacer in tight pitch fin field effect transistors2022
Folded channel vertical transistor and method of fabricating same2022
Heat exchanging unit, a heat exchanging system and a method of determining failu2022
Method and device for improving voice quality2021
Lateral double-diffused metal-oxide-semiconductor (LDMOS) fin field effect trans2021
Bi-directional transistor devices having electrode covering sidewall of the Fin 2021
Channel covariance matrix conversion2021
Integrated tensile strained silicon NFET and compressive strained silicon-german2021