Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices

Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices

US Patent 12106791 · Granted Oct 1, 2024

Estimated economic value: $36,915,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Highly textured buffer layer to grow YBiPt (110) for spintronic applications2025
Highly textured buffer layer to grow YBiPt (110) for spintronic applications2025
Spin orbit torque based thermal sensor for insitu monitoring of magnetic recordi2025
Spin orbit torque based thermal sensor for insitu monitoring of magnetic recordi2025
Filter cleaning system for use with an external mounted filter assembly includin2025
Nitrogen doped oxides for lower bandgap2025
Nitrogen doped oxides for lower bandgap2025
Nitrogen doped oxides for lower bandgap2025
Multilayer structures for magnetic recording devices to facilitate targeted magn2025
Multilayer structures for magnetic recording devices to facilitate targeted magn2025
Non-localized spin valve multi-free-layer reader hybridized with spin orbit torq2025
Non-localized spin valve multi-free-layer reader hybridized with spin orbit torq2025