Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having porous region embedded structure and method of manufacture thereof

Semiconductor device having porous region embedded structure and method of manufacture thereof

US Patent 12054838 · Granted Aug 6, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure enhanced for high voltage applications2025
Capacitor structure with via embedded in porous medium2025
Capacitor structure with via embedded in porous medium2025
Method of fabricating a semiconductor structure with improved dicing properties2025
Device having an anodic porous region surrounded by a trench having an electrica2025
Through-interposer grounding using blind vias2025
Electronic component comprising a 3D capacitive structure2025
Electrical device comprising a capacitor wherein the dielectric comprises anodic2025
Electrical device comprising a capacitor wherein the dielectric comprises anodic2025
Method for forming product structure having porous regions and lateral encapsula2025
Method for forming product structure having porous regions and lateral encapsula2025
Semiconductor structure with crack-blocking three-dimensional structure2025