Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Optoelectronic device having a boron nitride alloy electron blocking layer and method of production

Optoelectronic device having a boron nitride alloy electron blocking layer and method of production

US Patent 12046698 · Granted Jul 23, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Time-gated energy spectra for removal of borehole capture background2025
Scandium target for a neutron generator for wellbore logging2025
System and method for positioning suspected article2025
Pulsed neutron logging mineralogy using oxide standards2025
Circuit board and manufacturing method thereof, and terminal device2025
Light-emitting device with polarization modulated last quantum barrier2024
Optoelectronic device formed on a flexible substrate2024
Multilayer metalens2024
Susceptors for induction heating with thermal uniformity2024
Light emitting diode with a graded quantum barrier layer2023
Susceptor2022
Forming III nitride alloys2022