Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Polysilicon removal in word line contact region of memory devices

Polysilicon removal in word line contact region of memory devices

US Patent 12041771 · Granted Jul 16, 2024

Estimated economic value: $13,398,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Flash memory device with three-dimensional half structure and methods for formin2025
Method of making semiconductor structure including buffer layer2025
Polysilicon removal in word line contact region of memory devices2025
Polysilicon removal in word line contact region of memory devices2025
Polysilicon removal in word line contact region of memory devices2025
Polysilicon removal in word line contact region of memory devices2025
Polysilicon removal in word line contact region of memory devices2025
Polysilicon removal in word line contact region of memory devices2025
Polysilicon removal in word line contact region of memory devices2025
Semiconductor device2025
Memory device and manufacturing method thereof2025
Memory device and manufacturing method thereof2025