Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Magnetoresistive stack/structure with one or more transition metals in an insertion layer for a memory and methods therefor

Magnetoresistive stack/structure with one or more transition metals in an insertion layer for a memory and methods therefor

US Patent 12029137 · Granted Jul 2, 2024

Estimated economic value: $1,309,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Magnetoresistive stack and methods therefor2025
Systems and methods for monitoring and managing memory devices2025
Magnetoresistive stack/structure and methods therefor2024
Systems and methods for monitoring and managing memory devices2023
In-plane spin orbit torque magnetoresistive stack/structure and methods therefor2023
Stacked magnetoresistive structures and methods therefor2022
Magnetoresistive devices and methods therefor2022
Magnetoresistive stack/structure including metal insertion substance2021
Shared spin-orbit-torque write line in a spin-orbit-torque MRAM2021
Data storage in synthetic antiferromagnets included in magnetic tunnel junctions2020
Preprogrammed data recovery2020
Magnetoresistive stacks and methods therefor2020