Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor

Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor

US Patent 12002880 · Granted Jun 4, 2024

Estimated economic value: $24,500,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Piezoelectric stack, piezoelectric element, and method of manufacturing piezoele2025
Electrochemical sensor unit, electrode for electrochemical sensor, and method of2025
Method for manufacturing structure2025
Method for manufacturing structure2025
Epitaxial substrate2024
Semiconductor wafer, electronic device, method of performing inspection on semic2024
Nitride crystal substrate and method for manufacturing the same2024
Method and device for manufacturing structure2024
Method and device for manufacturing structure2024
Nitride semiconductor substrate, laminate, substrate selection program, substrat2024
Method for producing nitride semiconductor laminate, silicon semiconductor produ2024
Laminated substrate having piezoelectric film, element having piezoelectric film2023