Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device structure with work function layer and method for forming the same

Semiconductor device structure with work function layer and method for forming the same

US Patent 12002871 · Granted Jun 4, 2024

Estimated economic value: $16,780,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device for recessed fin structure having rounded corners2025
Semiconductor device and method2025
Semiconductor structures and methods for manufacturing the same2025
Semiconductor device2025
Metal gate with silicon sidewall spacers2025
Metal gate with silicon sidewall spacers2025
Fin field-effect transistor and method of forming the same2025
Semiconductor device with fin isolation2025
FinFET device and method of forming and monitoring quality of the same2025
Method for manufacturing semiconductor devices having gate spacers with bottom p2025
Mechanisms for forming FinFET device2025
FinFET device comprising plurality of dummy protruding features2024