Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Backside metal-insulator-metal (MIM) capacitors extending through backside interlayer dielectric (BILD) layer or semiconductor layer and partly through dielectric layer

Backside metal-insulator-metal (MIM) capacitors extending through backside interlayer dielectric (BILD) layer or semiconductor layer and partly through dielectric layer

US Patent 12002758 · Granted Jun 4, 2024

Estimated economic value: $14,788,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integratead wet clean for bevel treatments2025
Structures and processes for void-free hybrid bonding2025
TSV and backside power distribution structure2025
Wraparound contact with reduced distance to channel2025
Nanowire source/drain formation for nanosheet device2025
MRAM structure with a T-shaped ferromagnetic layer2025
Local enlarged via-to-backside power rail2025
Skip-level TSV with hybrid dielectric scheme for backside power delivery2025
Dual structured buried rail2025
Method and structure of forming independent contact for staggered CFET2025
Strain generation and anchoring in gate-all-around field effect transistors2025
Buried power rail with robust connection to a wrap around contact2025