Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › CMOS image sensor having front side and back side trench isolation structures enclosing pixel regions and a capacitor for storing the image charge

CMOS image sensor having front side and back side trench isolation structures enclosing pixel regions and a capacitor for storing the image charge

US Patent 11984464 · Granted May 14, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Operation method to mitigate lag issue with high k metal-insulator-metal (MIM) c2025
Image sensor with varying depth deep trench isolation structure for reduced cros2025
High K metal-insulator-metal (MIM) capacitor network for lag mitigation2024
Optimized pixel design for mitigating MIM image lag2024
Dark-current inhibiting image sensor and method2024
Suppressed cross-talk pixel-array substrate and fabrication method2024
Pixel layout with photodiode region partially surrounding circuitry2024
Process to release silicon stress in forming CMOS image sensor2024
Transistor having increased effective channel width2024
SiGe photodiode for crosstalk reduction2024
Image sensor with elevated floating diffusion2024
Hose quick connection device for fracturing equipment2024