Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device comprising insulated gate bipolar transistor (IGBT), diode, and well region

Semiconductor device comprising insulated gate bipolar transistor (IGBT), diode, and well region

US Patent 11973132 · Granted Apr 30, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vehicle control device2025
Semiconductor device including groove in termination region2024
Semiconductor device2022
Semiconductor device2021
Semiconductor device2020