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Home › Field-effect transistors (FETs) employing edge transistor current leakage suppression to reduce FET current leakage

Field-effect transistors (FETs) employing edge transistor current leakage suppression to reduce FET current leakage

US Patent 11948978 · Granted Apr 2, 2024

Estimated economic value: $17,562,000 ⓘ

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