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Home › Self-biased or biasing transistor(s) for an electronic voltage divider circuit, using insulating thin-film or FDSOI (fully depleted silicon on insulator) technology

Self-biased or biasing transistor(s) for an electronic voltage divider circuit, using insulating thin-film or FDSOI (fully depleted silicon on insulator) technology

US Patent 11940825 · Granted Mar 26, 2024

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