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Home › Method for producing semiconductor wafers of monocrystalline silicon by pulling a single silicon crystal from a melt contained in a crucible and continually changing the rotational direction of the crucible

Method for producing semiconductor wafers of monocrystalline silicon by pulling a single silicon crystal from a melt contained in a crucible and continually changing the rotational direction of the crucible

US Patent 11905617 · Granted Feb 20, 2024

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