Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor fabrication method and structure using multiple sacrificial layers to form sidewall spacers

Semiconductor fabrication method and structure using multiple sacrificial layers to form sidewall spacers

US Patent 11894231 · Granted Feb 6, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Signal decision equalization method and apparatus2025
Semiconductor structure and method of forming semiconductor structure2025
Sensory activity board2025
Multi fluid path selector valve and integrated multichannel fluid path module2024
Pipetting device2024
Photon measuring and reading device2024
Transaction settlement method and apparatus2024
Semiconductor structure and method of forming semiconductor structure2024
Semiconductor structure and method for fabricating the same2023
Semiconductor structure and fabrication method thereof2023
Semiconductor device2023
Bamboo strip shaping device and method2023