Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device comprising magnetic tunneling junctions (MTJs) in a magnetoresistive random access memory (MRAM)

Semiconductor device comprising magnetic tunneling junctions (MTJs) in a magnetoresistive random access memory (MRAM)

US Patent 11871585 · Granted Jan 9, 2024

Estimated economic value: $1,231,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Film forming apparatus and method for reducing arcing2025
MRAM structure with contact plug protruding out of contact hole and method of fa2025
Semiconductor device and method for fabricating the same2025
MOS capacitor and fabrication method thereof2025
Semiconductor structure and method for forming the same2025
Semiconductor device and method for fabricating the same2025
Physical vapor deposition (PVD) system and method of processing target2025
Semiconductor device and method for fabricating the same2025
Magnetoresistive random access memory2025
Semiconductor device comprising magnetic tunneling junctions with different dist2024
Semiconductor device comprising magnetic tunneling junctions with different dist2024
Semiconductor device comprising magnetic tunneling junctions with different dist2024