Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

US Patent 11871572 · Granted Jan 9, 2024

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated assemblies and methods of forming integrated assemblies2025
Integrated structures, capacitors and methods of forming capacitors2025
Memory circuitry comprising strings of memory cells and method used in forming a2025
Memory circuitry comprising strings of memory cells and method used in forming a2025
Capacitors having vertical contacts extending through conductive tiers2025
Integrated circuitry and method used in forming a memory array comprising string2025
Integrated assemblies which include stacked memory decks, and methods of forming2025
Memory arrays comprising strings of memory cells and methods used in forming a m2025
Memory device including control gates having tungsten structure2025
Integrated circuitry comprising a memory array comprising strings of memory cell2025
Method used in forming a memory array comprising strings of memory cells using p2025
Memory arrays comprising strings of memory cells with conductive islands2025