Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods for producing a single crystal silicon ingot using a vaporized dopant

Methods for producing a single crystal silicon ingot using a vaporized dopant

US Patent 11866844 · Granted Jan 9, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Systems and methods for producing a single crystal silicon ingot using a vaporiz2025
Systems and methods for producing a single crystal silicon ingot using a vaporiz2025
Systems and methods for producing a single crystal silicon ingot using a vaporiz2025
Methods for producing a single crystal silicon ingot using boric acid as a dopan2025
Methods for producing a single crystal silicon ingot using boric acid as a dopan2025
Use of arrays of quartz particles during single crystal silicon ingot production2025
Method of processing a cleaved semiconductor wafer2025
Method of processing a cleaved semiconductor wafer2025
Systems and methods for controlling a gas dopant vaporization rate during a crys2025
Systems and methods for controlling a gas dopant vaporization rate during a crys2025
Systems and methods for controlling a gas dopant vaporization rate during a crys2025
Systems and methods for controlling a gas dopant vaporization rate during a crys2025