Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Manufacturing method of a semiconductor device with efficient edge structure

Manufacturing method of a semiconductor device with efficient edge structure

US Patent 11854809 · Granted Dec 26, 2023

Estimated economic value: $15,895,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

4H-SiC electronic device with improved short-circuit performances, and manufactu2025
4H-SiC electronic device with improved short-circuit performances, and manufactu2025
4H-SiC electronic device with improved short-circuit performances, and manufactu2025
Method for manufacturing a SiC electronic device with reduced handling steps, an2025
Method for manufacturing a SiC electronic device with reduced handling steps, an2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of a semiconductor device with efficient edge structure2025
HEMT transistor including an improved gate region and related manufacturing proc2025