Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Horizontal gate-all-around device nanowire air gap spacer formation

Horizontal gate-all-around device nanowire air gap spacer formation

US Patent 11848369 · Granted Dec 19, 2023

Estimated economic value: $56,890,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Pop up greeting card2025
Memory device including processing circuit, and electronic device including syst2025
Image sensor diagonal isolation structures2025
Pixel cell having anti-blooming structure and image sensor2025
Application-transparent near-memory processing architecture with memory channel 2025
Passivation-enhanced image sensor and surface-passivation method2024
Computer architecture having selectable parallel and serial communication channe2024
Fluorine-free tungsten ALD for dielectric selectivity improvement2024
Systems and methods for hardware-based asynchronous persistence2024
Method of dielectric material fill and treatment2024
Electronic device having an oxygen free platinum group metal film2024
Integrated dipole flow for transistor2024