Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing semiconductor device having low-k carbon-containing dielectric layer

Method for manufacturing semiconductor device having low-k carbon-containing dielectric layer

US Patent 11848198 · Granted Dec 19, 2023

Estimated economic value: $9,903,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having metallization layer with low capacitance and method 2025
Semiconductor device having metallization layer with low capacitance and method 2025
Semiconductor interconnection structures comprising a resistor device and method2025
Semiconductor interconnection structures comprising a resistor device and method2025
Semiconductor structure with air gap and method for manufacturing the same2025
Semiconductor structure with air gap and method for manufacturing the same2025
Semiconductor device structure and methods of forming the same2025
Semiconductor structure with improved heat dissipation2025
Semiconductor structure with improved heat dissipation2025
Method for manufacturing semiconductor structure with material in monocrystallin2025
Method for manufacturing semiconductor structure with material in monocrystallin2025
Semiconductor device structure having air gap and methods of forming the same2025